Ferroelectric capacitor having a PZT layer with an excess of Pb
US6555864B1 · kind B1 · utility
5Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2000 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Feb 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric capacitor includes a lower electrode, a ferroelectric capacitor insulation film formed on the lower electrode and an upper electrode formed on the ferroelectric capacitor insulation film, wherein the ferroelectric capacitor insulation film has a composition of PZT and contains an excess amount of Pb with respect to a stoichiometry of PZT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.