Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate

US6555874B1 · kind B1 · utility

Assignee

• Sharp Laboratories of America, Inc. · US

Inventors

• Sheng Teng Hsu · Camas, US
• Douglas J. Tweet · Camas, US
• Bruce D. Ulrich · Beaverton, US
• Hong Ying · Cupertino, US

Key dates

• Filing date: Aug 28, 2000
• Grant date: Apr 29, 2003
• Expiry date: Aug 28, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A semiconductor structure includes, on a SOI substrate, a CMOS formed on the substrate; and a SiGe HBT formed on the substrate. A method of fabricating a semiconductor structure includes preparing a SOI substrate having plural active regions thereon; forming a CMOS on the SOI substrate in a first active region; and forming a SiGe HBT on the SOI substrate in another active region.