Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes
US6555890B2 · kind B2 · utility
17Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2001 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | May 23, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.