Method and apparatus for using parasitic effects in processing high speed signals
US6556056B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2002 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Apr 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K5/00006
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of designing an electronic circuit system with multiple Field Effect Transistors (FETs) made by a variety of nonstandard industrial processes is presented. With this method, the circuit parameters of the various components of the individual functional building blocks of the circuit system are systematically adjusted to minimize the many deteriorating effects resulting from system-level interactions among these functional building blocks. In one embodiment, the method is applied to a Silicon On Insulator (SOI) CMOS IC that is a Divide-by-16 divider where the functional building blocks are four Divide-by-2 dividers. The resulting drastic improvement of output signal ripple from each divider stage is graphically presented. In another embodiment, the method is applied to another SOI CMOS IC that is a Bang Bang Phase Detector where the functional building blocks are three Master Slave D-Type Flip Flops. The resulting drastic improvement of output signal ripple is also graphically presented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.