Spin valve sensors with an oxide layer utilizing electron specular scattering effect
US6556390B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2000 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Apr 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3263
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention comprises a magnetoresistive sensor including a cap layer, a free layer, a spacer layer, a pinned layer, an oxide layer, a pinning layer, a seed layer, and a substrate layer. The sensor consists of the cap layer adjacent the free layer. The free layer is adjacent to the spacer layer. The spacer layer is adjacent to the pinned layer. The pinned layer is adjacent to the oxide layer. The oxide layer is adjacent to the pinning layer. The pinning layer is adjacent to the seed layer and the seed layer is adjacent to the substrate. The present invention also comprises a method of manufacturing the magnetoresistive sensor including forming a layered structure. An electron specular scattering effect occurs at the oxide interface to achieve enhanced GMR responses while maintaining thermostability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.