Method of hot-filament chemical vapor deposition of diamond
US6558742B1 · kind B1 · utility
5Cited by
16References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2000 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Feb 10, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/271
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming diamond crystals and diamond films from a dissociated precursor solution of methanol and at least one carbon containing compound having a carbon to oxygen ration of greater than one is disclosed. The A hot filament is applied to dissociate the vaporized precursor of the premixed solution and generate oxidizing and etching radicals such as OH. O, H as well as carbon depositing radicals such as CH3. Graphitic and amorphous carbon deposition is suppressed or preferentially etched resulting in the net deposition of good quality diamond crystals and diamond films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.