Patent · US Expired

Pattern formation

US6558869B1 · kind B1 · utility

7Cited by
27References
39Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 25, 2000
Grant dateMay 6, 2003
Priority date
Expiry dateApr 25, 2020

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/165
  • WIPO fieldTextile and paper machines
  • WIPO sectorMechanical engineering

Abstract

This invention is directed to a precursor for preparing a resist pattern by heat mode imaging, the precursor comprising a heat sensitive composition, the solubility of which in an aqueous alkaline developer is arranged to increase in heated areas, and a means for increasing the resistance of non-heated areas of the heat sensitive composition to dissolution in an aqueous alkaline developer (the “developer resistance means”), wherein said developer resistance means comprises one or more compounds selected from the group consisting of:(A) compounds which include a poly(alkylene oxide) unit;(B) siloxanes; and(C) esters, ethers and amides of polyhydric alcohols,wherein said heat-sensitive composition comprises an aqueous alkaline developer soluble polymeric substance (i.e. the “active polymer”) and a compound which reduces the aqueous alkaline developer solubility of the polymeric substance (i.e. the “reversible insolubilizer compound”) such that the aqueous alkaline developer solubility of the composition is increased on heating and the aqueous alkaline developer solubility of the composition is not increased by incident UV radiation. The invention p…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.