Process for producing semiconductor device
US6558975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2001 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Aug 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a semiconductor device comprising the steps of providing a wafer having a surface furnished with semiconductor circuits and a back; forming grooves of a depth smaller than the thickness of the wafer, said grooves extending from the wafer circuit surface; sticking a surface protective sheet onto the wafer circuit surface; grinding the back of the wafer so that the thickness of the wafer is reduced, resulting in division of the wafer into individual chips with spaces therebetween; sticking a pressure sensitive adhesive sheet onto the ground back of the wafer, pressure sensitive adhesive sheet comprising a base and, superimposed thereon, an energy radiation curable pressure sensitive adhesive layer; exposing the energy radiation curable pressure sensitive adhesive layer to an energy radiation; and peeling the surface protective sheet from the wafer circuit surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.