Method to reduce downtime while implanting GeF4
US6559462B1 · kind B1 · utility
28Cited by
9References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2000 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | May 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The operating lifetime of a hot cathode discharge ion source is extended by introducing nitrogen into an ion implantation apparatus after introduction of an ion implantation gas, such as GeF4, is stopped. The nitrogen is preferably introduced along with the GeF4 during implantation as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.