Semiconductor device for precise measurement of a forward voltage effect
US6559481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2002 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Feb 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
Abstract
A semiconductor device such as an IGBT, for realizing measurement precision for forward voltage effect characteristics using a relatively small current. It includes a second conductivity type of first anode region formed to partially constitute the upper surface of a first conductivity type of semiconductor substrate and having an anode electrode formed on its upper surface, a second anode region formed within said first anode region, and an anode electrode formed on said second anode region. The second anode region is electrically isolated from the first anode region, and the anode electrode formed on the upper surface of the second anode region is independent of the anode electrode formed on the upper surface of the first anode region. In such semiconductor device having said second anode region, even though a small force current, measurement can be performed at a current density which is equal to or close to a rated current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.