Low leakage current SRAM array
US6560139B2 · kind B2 · utility
61Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2001 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Mar 5, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/412
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An SRAM array is disclosed. The SRAM array includes a plurality of SRAM cells. In one embodiment, the SRAM cells are 6-T SRAM cells that further includes a voltage bias device. The voltage bias device raises the voltage level of a low voltage rail Vss such that the plurality of SRAM cells are connected to a raised low voltage rail.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.