Thin-film formation system and thin-film formation process
US6562200B2 · kind B2 · utility
9Cited by
9References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Aug 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3447
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a thin-film formation process and system, a target and a substrate are placed in a sputtering space and a film-forming space, respectively, the pressure in the film-forming space is maintained at a pressure lower than the pressure in the sputtering space and a pressure sufficient for sputtered particles to move in the film-forming space with their mean free path which is longer than the distance between the grid plate and the substrate, and the target is sputtered to form a thin film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.