Method for the formation of copper wiring films
US6562219B2 · kind B2 · utility
4Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Nov 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for the formation of copper wiring films includes the steps of forming a first copper film by a CVD method on a diffusion barrier film, which diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.