Semiconductor device and method of manufacturing the same
US6562669B2 · kind B2 · utility
28Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Nov 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a structure of a pixel TFT (n-channel type TFT) in which an off current value is sufficiently low. In impurity regions, a concentration distribution of an impurity element imparting one conductivity type is made to have a concentration gradient, the concentration is made low at a side of a channel formation region, and the concentration is made high at the side of an end portion of a semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.