System for providing a continuous motion sequential lateral solidification
US6563077B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | May 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for processing an amorphous silicon thin film sample to produce a large grained, grain boundary-controlled silicon thin film. The film sample includes a first edge and a second edge. In particular, using this method and system, an excimer laser is used to provide a pulsed laser beam, and the pulse laser beam is masked to generate patterned beamlets, each of the patterned beamlets having an intensity which is sufficient to melt the film sample. The film sample is continuously scanned at a first constant predetermined speed along a first path between the first edge and the second edge with the patterned beamlets. In addition, the film sample is continuously scanned at a second constant predetermined speed along a second path between the first edge and the second edge with the patterned beamlets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.