Electrically tunable device and a method relating thereto
US6563153B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Jun 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/64
Abstract
A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner. At least a first and a second layer of the ferroelectric layers have different Curie temperatures, i.e. the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different from the temperature at which the dielectric constant of the second ferroelectric layer has a maximum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.