Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer
US6563169B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1999 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Aug 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A highly conductive region 18 serving as a surface of a drain layer 2 of a first conductivity type is diffused more deeply than a main diffused layer 36 and a diffused channel layer 37, and has a small conducting resistance. The highly conductive region 18 is surrounded by a diffused region 40 of a second conductivity type which comprises a diffused base layer 38 and a diffused guard ring layer 13. Therefore, the highly conductive region 18 does not form spherical junctions, and a depletion layer spreading in the highly conductive region 18 extends into the highly conductive region 18. The highly conductive region 18 thus has a high withstand voltage while maintaining the low conducting resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.