Semiconductor device having a bump electrode
US6563216B1 · kind B1 · utility
25Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2000 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Aug 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/05042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, a metal wiring film and a lower-layer film under a bump electrode are patterned to form irregular steps under the bump electrode. With the formation of the irregular steps, the contact area of the bump electrode with a semiconductor substrate is increased to improve the mechanical strength. The lower-layer film is formed of a polysilicon film, an insulating film or a protective film such as a silicon nitride film, or Al—Si—Cu, Al—Si, Al—Cu or Cu. A portion where irregular steps are formed is in a region under the bump except for a protective film opening portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.