Magneto resistive element
US6563682B1 · kind B1 · utility
12Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/82
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A second magnetic metal layer which is a magnetization free layer is successively covered with a non-magnetic metal layer and an anti-ferromagnetic layer. This enables to make the magnetization free layer a single magnetic domain and prevent generation of a domain wall. This prevents hysteresis and suppresses the Barkhausen noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.