Method of manufacturing tandem thin-film solar cell
US6566159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Oct 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49355
Abstract
A method of manufacturing a tandem thin-film solar cell is provided, the solar cell including a plurality of photoelectric conversion units stacked on a substrate, the photoelectric conversion units each having a p-type layer, an i-type photoelectric conversion layer and an n-type layer deposited in this order from a light-incident side of the solar cell, and at least a rear unit among the photoelectric conversion units that is furthest from the light-incident side being a crystalline unit including a crystalline i-type photoelectric conversion layer. The manufacturing method includes the steps of forming at least one of the units on the substrate by plasma CVD and immediately thereafter forming an i-type boundary layer to a thickness of at most 5 nm by plasma CVD, and thereafter removing the substrate into the atmosphere to expose a surface of the i-type boundary layer to the atmosphere and then forming a crystalline unit on the i-type boundary layer by plasma CVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.