Tantalum sputtering target and method of manufacture
US6566161B1 · kind B1 · utility
15Cited by
18References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Nov 20, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/968
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.