High voltage integrated switching devices on a bonded and trenched silicon substrate
US6566223B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Oct 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.