Process for producing semiconductor member, and process for producing solar cell
US6566235B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Apr 26, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a semiconductor member, comprising a first step of forming a porous layer by making porous a first member at its surface portion, leaving some region or regions thereof not made porous; a second step of bonding a semiconductor layer formed on the porous layer and on the first-member surface left not made porous, to a second member to form a bonded structure; and a third step of separating the bonded structure at the part of the porous layer. The first member is made porous leaving some region or regions thereof not made porous so that the porous layer does not cause any separation at the part of the porous layer in the first and second steps.This process can make the semiconductor layer unseparable from the single-crystal silicon member before the separation for transferring the semiconductor layer to the support member side, without setting the anodizing conditions strictly.Also disclosed is a process for producing a solar cell by the above process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.