Semiconductor device and method of manufacturing the same
US6566261B2 · kind B2 · utility
5Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Sep 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/959
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.