Double gate photo sensor array
US6566685B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Aug 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A photo sensor array comprises a plurality of photoelectric conversion elements separated from each other in a predetermined direction to be arranged, each photo conversion element including a semiconductor layer having an incidence effective region on which excited light is incident, source-drain electrodes provided respectively on both ends of the semiconductor layer, a first gate electrode provided below the semiconductor layer via the first gate insulating film. A second gate electrode provided above the semiconductor layer via the second gate insulating film. A source terminal commonly connects to the source electrodes of the photoelectric conversion elements, and a drain terminal commonly connects the drain electrodes of the photoelectric conversion elements, a first gate terminal commonly connects the first gate electrodes of the photoelectric conversion elements, and a second gate terminal commonly connects the second gate terminal of the photoelectric conversion elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.