Semiconductor device
US6566728B1 · kind B1 · utility
1Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Oct 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R19/04
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P+-type separated area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.