Semiconductor device
US6566734B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Mar 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
Abstract
In making a field effect transistor, a dummy gate electrode is formed before a gate electrode is formed. Extension regions, a side wall silicon nitride film, source/drain regions, a silicon oxide film, and other elements are formed with respect to the dummy gate electrode. The dummy gate electrode is removed, and a part of the extension regions diffused into a region immediately under the dummy gate electrode is removed. The removed part is filled with silicon selection epitaxial film. Thereafter, the intended gate electrode is formed. This production method produces a field effect transistor that prevents deterioration of electrical characteristics caused by the short channel effect and parasitic resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.