Multiple directional scans of test structures on semiconductor integrated circuits
US6566885B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Oct 1, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/849
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sample is inspected. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.