Non-volatile semiconductor memory device having a charge storing insulation film and data holding method therefor
US6567312B1 · kind B1 · utility
106Cited by
6References
20Claims
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Key dates
| Filing date | Oct 13, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Oct 13, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a flash memory having, for example, a single-gate type memory cell consisting of the gate electrode provided via a thin charge trap layer on a semiconductor substrate, there is provided a non-volatile semiconductor memory that is characterized in applying a short pulse to the memory cell to partly remove the electrons from the charge trap layer after writing the data to the memory cell. This ensures the write operation reliability of non-volatile semiconductor memory such as single-gate type flash memory or the like without changing the basic structure of the memory cell array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.