Nonvolatile memory, semiconductor device and method of programming to nonvolatile memory
US6567313B2 · kind B2 · utility
33Cited by
3References
47Claims
0Family size
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Key dates
| Filing date | Sep 28, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Sep 28, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a nonvolatile memory with a shortened total write time, capable of stably writing data by making a write current constant while reducing fluctuations in a voltage generated by a booster circuit. In a nonvolatile memory such as a flash memory, data is determined at the time of writing operation. While skipping a bit corresponding to write data having the logic “1” (or logic “0”), writing operation to bits corresponding to write data having the logic “0” (or logic “1) is successively performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.