Nonvolatile semiconductor memory with controlled supply of boosted voltage
US6567319B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 17, 2002 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Jun 17, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory is designed to avoid a situation that the program cannot escape from a writing operation, and the writing operation can be promptly finished according to the level of an external source voltage. This semiconductor memory has a voltage detecting circuit for detecting whether a boosted voltage has reached a predetermined potential and a timer capable of counting predetermined time. A control circuit applies the boosted voltage to a selected memory cell when the voltage detecting circuit detects that the boosted voltage has reached the predetermined potential or when it is detected that the predetermined time has elapsed since the start of the boosting operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.