Semiconductor laser device and semiconductor laser module using the same
US6567447B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Oct 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3403
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 &mgr;m but equal to or smaller than 1800 &mgr;m, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.