Method of evaluating capacitance value of capacitor on semiconductor substrate
US6568243B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 19, 1999 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Feb 19, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Surface irregularity of a semiconductor device is measured with high accuracy, without being affected by the material properties of a semiconductor film forming the surface. Surface irregularity is evaluated when the semiconductor device is fabricated. This is accomplished using a plate-like element, which has a contact surface brought into contact with the surface of a test specimen. The plate-like element is then moved across the surface of the test specimen by a driving mechanism. The driving mechanism moves either the plate-like element or the test specimen relative to the other. A force caused by the motion is detected, and converted into a parameter equivalent to the friction coefficient between the test specimen and the contact surface. From the friction coefficient, surface irregularity is determined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.