Silicon wafer and epitaxial silicon wafer utilizing same
US6569535B2 · kind B2 · utility
10Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Dec 18, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon wafer characterized in that the laser scattering tomography defect occurrence region accounts for at least 80% of the wafer surface area and that the laser scattering tomography defects have a mean size of not more than 0.1 &mgr;m, with the density of those defects which exceed 0.1 &mgr;m in size being not more than 1×105 cm−3, and wafers derived from this wafer as the raw material by heat treatment for oxide precipitate formation, by heat treatment for denuded layer formation or by epitaxial layer formation on the surface are useful as semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.