Hydrogen anneal before gate oxidation
US6569741B2 · kind B2 · utility
2Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Nov 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for preparing a silicon surface for gate dielectric formation. The silicon is annealed in a hydrogen ambient prior to gate dielectric formation. The gate dielectric is then formed, along with other layers of the gate structure. The channel is then implanted with an ion implant through the gate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.