Material of photoresist protect oxide
US6569784B1 · kind B1 · utility
6Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Jul 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
A new layer of RPO is provided for semiconductor devices, specifically for semiconductor device having sub-micron device feature size. The layer of RPO that is provided by the invention comprises a layer of silicon-rich CVD oxide, having a refractive index of between about 1.57 and 1.60 to prevent silicon atoms that are present in a layer of polysilicon from diffusing into the overlying layer of resist protect oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.