Magnetron negative ion sputter source
US6570172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2000 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | May 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A negative ion source is disclosed which includes an electrode, a target having a more negative electrical potential than the electrode, a supply of electrical energy for generating a discharge between the electrode and the target, and at least one magnet positioned so as to confine electrons, generated as a result of said discharge, in close proximity to a first surface of the target. The negative ion source further includes a delivery system for delivering cesium to a second surface of the target, and a distribution chamber interposed between the delivery system and the target for uniformly distributing cesium on the second surface of said target. The cesium diffuses through openings in the target from the first surface to the second surface. The negative ion source may comprise a conventional magnetron sputter source that has been retrofitted to include a cesium distribution system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.