III-V semiconductors separate confinement superlattice optoelectronic devices
US6570179B1 · kind B1 · utility
3Cited by
4References
31Claims
0Family size
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Key dates
| Filing date | Apr 13, 2000 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Apr 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/06
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.