Liquid crystal display for preventing galvanic phenomenon
US6570183B1 · kind B1 · utility
1Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1999 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Nov 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/451
Abstract
A thin film transistor having a source/drain electrode on an insulating substrate is provided with a metal oxide layer interposed between a source/drain electrode and a metal connecting line. The formation of the metal oxide layer prevents the occurrence of the galvanic phenomenon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.