Structure to reduce the on-resistance of power transistors
US6570185B1 · kind B1 · utility
30Cited by
22References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 7, 1997 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Apr 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A power transistor is disclosed that exhibits increased power capacity, reduced on-resistance and prevents current pinch off. The transistor comprises an insulated gate field-effect transistor and including a gate insulator; a protective region having a first conductivity type adjacent the insulator of the transistor for protecting the insulator from the degrading or breakdown effects of a large voltage applied across the device; and a current-enhancing layer having the opposite conductivity type from the protective region and positioned between the protective region and another first conductivity-type region of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.