Optical device having sensing TGTs and switching TFTs with different active layer thickness
US6570197B2 · kind B2 · utility
7Cited by
1References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 28, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Sep 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A thin film transistor optical detecting sensor includes an array substrate having a transparent substrate, a plurality of sensor thin film transistors disposed on the transparent substrate, each having a first silicon layer of a first thickness, a plurality of storage capacitors, each connected with a corresponding one of the plurality of sensor thin film transistors, storing charges of an optical current, and a plurality of switch thin film transistors, each having a second silicon layer of a second thickness less than the first thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.