Solid state imaging device having a photodiode and a MOSFET
US6570222B2 · kind B2 · utility
33Cited by
4References
61Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Mar 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.