Field emission electron source and fabrication process thereof
US6570305B1 · kind B1 · utility
5Cited by
7References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1999 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Jun 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/3044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A silicon substrate is used as the substrate, on which a conical projection is formed as a cathode. A gate electrode is arranged via an insulating film formed on the substrate. The gate electrode is formed so as to enclose and encircle the cathode while the pointed portion of the cathode and the surface of the gate electrode are coated with two layered coating films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.