Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film
US6572923B2 · kind B2 · utility
7Cited by
15References
19Claims
0Family size
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Key dates
| Filing date | Jan 9, 2002 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jan 9, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.