Silica zeolite low-k dielectric thin films and methods for their production
US6573131B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jul 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition. Zeolite films having patterned surfaces may also be produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.