Methods for forming conductive contact body for integrated circuits using dummy dielectric layer
US6573168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jun 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for conductively contacting an integrated circuit, including a plurality of spaced apart lines thereon, using a dummy dielectric layer. A dummy dielectric layer is formed between first selected ones of the spaced apart lines. An interdielectric layer is formed between second selected ones of the spaced apart lines that are different from the first selected ones of the lines. The interdielectric layer has a lower etch rate than the dummy dielectric layer with respect to a predetermined etchant. The dummy dielectric layer is etched with the predetermined etchant, to remove at least some of the dummy dielectric layer between the first selected ones of the spaced apart lines. A conductive layer is formed between the first selected ones of the spaced apart lines from which at least some of the dummy dielectric layer has been removed, to electrically contact the integrated circuit between the first selected ones of the spaced apart lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.