Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere
US6573195B1 · kind B1 · utility
82Cited by
6References
69Claims
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Assignee
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Key dates
| Filing date | Jan 24, 2000 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jan 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In fabricating a semiconductor device, a hydrogen-containing first insulating film is formed over a semiconductor layer, a gate insulating film and a gate electrode, and a first heat-treatment in a hydrogen atmosphere is performed. A second insulating film can be formed on the first insulating film, and a second heat-treatment in a hydrogen atmosphere performed. A hydrogen-containing third insulating film can be formed on the second insulating film, and a third heat-treatment in an atmosphere containing hydrogen or nitrogen performed. By these methods, damages to a semiconductor layer caused by hydrogenation can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.