Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6573537B1 · kind B1 · utility
261Cited by
24References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Apr 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8585
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than 25% of incident light per pass at the peak emission wavelength of the LED active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.