Photo semiconductor integrated circuit device and optical recording reproducing apparatus
US6573578B2 · kind B2 · utility
5Cited by
2References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Aug 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/957
Abstract
A photo semiconductor integrated circuit device has a photodiode portion and amplifier portion, each portion having a buried layer. The impurity concentration and/or depth of the buried layer for the photodiode portion is lower than that of the buried layer for the amplifier portion. As a result, the frequency band width is widened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.