Reduced dark current pin photo diodes using intentional doping
US6573581B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Feb 7, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In a semiconductor p-i-n photodiode an undoped absorption region (10) is epitaxially grown between two highly doped regions (14, 16). In prior art lattice matched InGaAs p-i-n photodiodes current epitaxial structures use low InP cap (16) doping (n˜2.5−6×1016/cm3), and nominally undoped (not intentionally doped, n˜1×1013−5×1014/cm3) InGaAs absorption regions (10). The shunt resistances of p-i-n photodiodes according to the present invention with intentional doping between n˜5×1017/cm3 and 1×1014/cm3, in the InGaAs absorption region (52, 60) are significantly increased over that of a standard structure (non-intentionally doped).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.